Добро е значи читаш. Да грешката е моја па затоа не се менува ништо освен место BC640 треба
BC639 кој е со исти карактеристики само н-п-н.
ПП. Ќе го изменам претходниот пост да нема забуни
2SC2001 Transistor Datasheet. Parameters and Characteristics.Type Designator: 2SC2001
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0.7
Maximum collector-base voltage |Ucb|, V: 30
Maximum collector-emitter voltage |Uce|, V: 25
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 0.7
Maximum junction temperature (Tj), °C: 150
Transition frequency (ft), MHz: 85
Collector capacitance (Cc), pF: 13
Forward current transfer ratio (hFE), min: 90
Noise Figure, dB: -
Package of 2SC2001 transistor: TO92
BC639 Transistor Datasheet. Parameters and Characteristics.Type Designator: BC639
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 1
Maximum collector-base voltage |Ucb|, V: 80
Maximum collector-emitter voltage |Uce|, V: 80
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 1
Maximum junction temperature (Tj), °C: 150
Transition frequency (ft), MHz: 50
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 40
Noise Figure, dB: -
Package of BC639 transistor: TO92
BC640 Transistor Datasheet. Parameters and Characteristics.
Type Designator: BC640
Material of transistor: Si
Polarity: PNP
Maximum collector power dissipation (Pc), W: 1
Maximum collector-base voltage |Ucb|, V: 80
Maximum collector-emitter voltage |Uce|, V: 80
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 1
Maximum junction temperature (Tj), °C: 150
Transition frequency (ft), MHz: 50
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 40
Noise Figure, dB: -
Package of BC640 transistor: TO92